Skip to main content

Samsung’s new 10-nanometer DDR4 chips are the fastest of their kind

Samsung 10nm-class DDR4
Image used with permission by copyright holder
Samsung announced on Monday that it has begun mass producing 10-nanometer (nm) class 8-gigabit (Gb) DDR4 chips and the resulting memory modules. Note the company’s use of the word “class,” which means the process node technology is actually somewhere between 10 and 19 nanometers. Still, this is a huge milestone for Samsung, which first mass-produced 20nm 4Gb DDR3 DRAM back in 2014.

So what does this mean for the average consumer? We’ll see more products that utilize fast DDR4 memory, or fourth-generation double-data-rate modules. Samsung’s new DRAM supports a transfer rate of 3,200 megabits per second (Mbps), making it faster than the same chips manufactured with the 20nm process, which support a slower 2,400Mbps. The new chips are also less power hungry, consuming 10- to 20-percent less power than 20nm chips.

Recommended Videos

The new 10nm chips are ideal for large enterprise networks and high-performance computing systems. However, the company plans to introduce a mobile version of its 10nm-class chips later this year, offering high density and speed to devices like ultra-HD smartphones and tablets.

Please enable Javascript to view this content

“The industry-first 10nm-class DRAM is the result of Samsung’s advanced memory design and manufacturing technology integration,” the company said on Monday. “To achieve an extremely high level of DRAM scalability, Samsung has taken its technological innovation one step further than what was used for 20nm DRAM. Key technology developments include improvements in proprietary cell design technology, QPT (quadruple patterning technology) lithography, and ultra-thin dielectric layer deposition.”

Samsung believes to 10nm DDR4 will help accelerate the shift to DDR4 memory across the industry.

On a more technical level, Samsung said that it utilized a proprietary circuit design technology and quadruple patterning lithography to create a 10nm-class cell structure. The company also improved memory performance by using refined dielectric layer deposition technology. Specifically, higher cell performance was achieved thanks to the engineers applying ultra-thin dielectric layers measuring around one 10 billionth of a meter on cell capacitors.

Samsung believes the shift to 10nm DDR4 will help accelerate the shift to DDR4 memory across the industry. The company also said that the rollout of 10nm-class chips improves the wafer productivity of 20nm 8Gb DDR4 DRAM “by more than 30-percent,” saving both the company and customers money in the long run.

Samsung plans to launch DDR4 modules with capacities ranging from 4GB built for notebooks, to 128GB chips to be used in enterprise-grade servers, throughout the year. Samsung is also beefing up its 20nm DRAM line-up as well, so keep an eye out for a load of Samsung DDR4 memory modules over the course of 2016.

Kevin Parrish
Former Digital Trends Contributor
Kevin started taking PCs apart in the 90s when Quake was on the way and his PC lacked the required components. Since then…
What’s the difference between DDR3 and DDR4 RAM?
A hand holding RAM.

DDR3 RAM had a long run after its 2007 release, powering mainstream laptops and desktop computers for many years. However, in 2014, DDR4 RAM was released to the public and has since become the most common memory type in desktop PCs, laptops, and tablets. With major changes to its physical design, specifications, and features, motherboards with DDR4 slots cannot use DDR3 RAM, and DDR4 RAM can't be put into a DDR3 slot. Neither is compatible with the newer DDR5 memory.
DDR4 versus DDR3 RAM
DDR4 tends to run at 1.2 volts by default, whereas DDR3 runs at 1.5V. While it may not seem like much, that's a 20% improvement in efficiency between generations. For most home users, the difference in voltage ultimately results in lower power consumption and heat generation, which can be especially important in laptops where it can impact battery life.

DDR4 is not just more power efficient -- it's a lot faster, too. DDR3 specifications range between 800 to 2,133 MTps (millions of transfers per second). In comparison, DDR4 RAM ranges between 2,133 to 3,200 MTps, not to mention the faster kits available through XMP and overclocking.

Read more
Samsung’s massive DDR5 512GB RAM modules are almost twice as powerful as DDR4
A black box with "Samsung DDR5" written inside, accompanied by two RAM modules, over an image of Earth.

Samsung is among the brands that will release DDR5 RAM this year -- and it seems the manufacturer has an industry- first in the works. During Hot Chips 33, an annual semiconductor disclosure event, Samsung revealed the development of its first DDR5 512GB RAM module. This new memory module is said to offer an up to 40% increase in performance over DDR4, combined with double the capacity and a lower voltage.

The announcement of the new massive memory stick was accompanied by more in-depth information about its architecture. DDR5-7200 is going to be a 512GB module made out of eight-stacked DDR5 dies. The dies are said to be connected with the use of through-silicon via (TSV) technology. The upgrade to eight dies is significant. It shows a marked improvement over DDR4 memory, which was always limited to four dies even in the best RAM available.

Read more
Samsung 2020 4K and 8K TV lineup: dizzying and dazzling
Samsung 2020 TVs

Samsung's new line of 2020 QLED 4K and 8K TVsĀ is here, with a majority of the new models now ready to order or pre-order and ship out starting today.

The 2020 lineup of Samsung TVs starts with the flagship Q950TS QLED 8K TV and features two more 8K displays in the Q900TS and Q800T. There are four different series of 4K QLED TVs -- the Q90T, Q80T, Q70T, and Q60T -- as well as a pair of Crystal 4K displays, plus the return of The Frame, Samsung's ultra-stylish TV/art fixture combo.

Read more